Perpustakaan ITB

Judul Penulis / Pembimbing TA Tahun Penerbit Perpustakaan

POROUS silicon carbide and gallium nitride : epitaxy, catalysis, and biotechnology applications

/ edited by Randall M. Feenstra and Colin E. C. Wood.


Nomor Panggil PUSAT

621.38152 POR

Penulis

FEENSTRA, Randall M. ; WOOD, Colin E. C.

Penerbit

Wiley

Tahun Terbit

2008

Ketersediaan

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1 20121931 PP ITB Lt. 2 (Koleksi Mingguan) Koleksi Mingguan
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Detil

ISBN : 978-0-470-51752-9
Kolasi : xiv, 318 halaman: gambar, tabel ; 24 cm.
Materi Koleksi : Buku-Bacaan Pendukung
Bahasa : Inggris
Subjek : Silicon carbide ; Gallium nitride ; Semiconductors
Kata Kunci : Silicon carbide ; Gallium nitride ; Catalysis ; Biotechnology
Keterangan : Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
URL : http://books.google.co.id/books?id=Oz6HRs8mpKIC&printsec=frontcover