/ edited by Randall M. Feenstra and Colin E. C. Wood.
621.38152 POR
FEENSTRA, Randall M. ; WOOD, Colin E. C.
Wiley
2008
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No | Nomor Induk | Lokasi | Koleksi |
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1 | 20121931 | PP ITB Lt. 2 (Koleksi Mingguan) | Koleksi Mingguan |
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ISBN | : 978-0-470-51752-9 |
Kolasi | : xiv, 318 halaman: gambar, tabel ; 24 cm. |
Materi Koleksi | : Buku-Bacaan Pendukung |
Bahasa | : Inggris |
Subjek | : Silicon carbide ; Gallium nitride ; Semiconductors |
Kata Kunci | : Silicon carbide ; Gallium nitride ; Catalysis ; Biotechnology |
Keterangan | : Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more |
URL | : http://books.google.co.id/books?id=Oz6HRs8mpKIC&printsec=frontcover |